DGTD65T40S2PT
ObsoleteDiodes Inc
650V FIELD STOP IGBT IN TO247
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DGTD65T40S2PT
ObsoleteDiodes Inc
650V FIELD STOP IGBT IN TO247
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DGTD65T40S2PT |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 60 nC |
| IGBT Type | Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 230 W |
| Reverse Recovery Time (trr) | 60 ns |
| Supplier Device Package | TO-247 |
| Switching Energy | 400 µJ, 500 µJ |
| Td (on/off) @ 25°C | 55 ns, 6 ns |
| Test Condition | 10 Ohm, 40 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DGTD65T15H2TF Series
The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
Documents
Technical documentation and resources