FCA20N60F
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, FRFET<SUP>®</SUP>, 600V, 20A, 190MΩ, TO-3P
FCA20N60F
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, FRFET<SUP>®</SUP>, 600V, 20A, 190MΩ, TO-3P
Description
General part information
FCA20N60F
SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Technical Specifications
Parameters and characteristics for this part
| Specification | FCA20N60F |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 98 nC |
| Input Capacitance (Ciss) (Max) | 3080 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3PN |
| Power Dissipation (Max) | 208 W |
| Rds On (Max) | 190 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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