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IRFP140NPBF - TO-247-3 AC EP

IRFP140NPBF

Active
Infineon Technologies

POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.052 OHM, TO-247AC, THROUGH HOLE

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IRFP140NPBF - TO-247-3 AC EP

IRFP140NPBF

Active
Infineon Technologies

POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.052 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP140NPBF
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC
Input Capacitance (Ciss) (Max) @ Vds1400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)140 W
Rds On (Max) @ Id, Vgs52 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.82
10$ 1.83
100$ 1.26
500$ 1.02
1000$ 0.94
2000$ 0.87
5000$ 0.87
NewarkEach 1$ 2.69
10$ 1.76
100$ 1.43
500$ 1.18
1600$ 1.11
3200$ 1.04

Description

General part information

IRFP140 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources