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DMG7430LFGQ-13 - PowerDI3333-8

DMG7430LFGQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMG7430LFGQ-13 - PowerDI3333-8

DMG7430LFGQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG7430LFGQ-13
Current - Continuous Drain (Id) @ 25°C10.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1281 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]900 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs11 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.26
6000$ 0.24
9000$ 0.23
15000$ 0.22

Description

General part information

DMG7430LFGQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, power-management functions, and DC-DC converters.