
2N6039G
ObsoleteON Semiconductor
4.0 A, 80 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

2N6039G
ObsoleteON Semiconductor
4.0 A, 80 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR
Description
General part information
2N6039G
The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6039G |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 750 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126 |
| Power - Max | 40 W |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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CAD
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Documents
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