SF46GH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF46GH

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Grade	Qualification
Taiwan Semiconductor Corporation SF46G	Through Hole	400 V	Standard	DO-201AD	5 µA	35 ns	4 A	1.3 V	80 pF	150 °C	-55 °C	DO-201AD Axial	200 mA 500 ns
Taiwan Semiconductor Corporation SF46GH	Through Hole	400 V	Standard	DO-201AD	5 µA	35 ns	4 A	1.3 V	80 pF	150 °C	-55 °C	DO-201AD Axial	200 mA 500 ns	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 4A Through Hole DO-201AD

Technical documentation and resources