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IRFD310

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Harris Corporation

0.4A 400V 3.600 OHM N-CHANNEL

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IRFD310

Active
Harris Corporation

0.4A 400V 3.600 OHM N-CHANNEL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFD310
Current - Continuous Drain (Id) @ 25°C350 mA
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds170 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-DIP (0.300", 7.62mm)
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs3.6 Ohm
Supplier Device Package4-DIP, Hexdip, HVMDIP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 243$ 1.24

Description

General part information

IRFD310

N-Channel 400 V 350mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Documents

Technical documentation and resources

No documents available