IRF8306MTRPBF

Obsolete

Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8306MTRPBF

Current - Continuous Drain (Id) @ 25°C	23 A, 140 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	4110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	75 W, 2.1 W
Rds On (Max) @ Id, Vgs [Max]	2.5 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	FET Feature
Infineon Technologies IRF8306MTRPBF	DIRECTFET™ MX	38 nC	2.1 W 75 W	150 °C	-40 °C	30 V	N-Channel	Surface Mount	2.5 mOhm	DirectFET™ Isometric MX	4110 pF	4.5 V 10 V	23 A 140 A	2.35 V	20 V	MOSFET (Metal Oxide)	Schottky Diode (Body)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources