HUFA75307T3ST
ObsoleteN-CHANNEL ULTRAFET POWER MOSFET 55V, 2.6A, 90MΩ
HUFA75307T3ST
ObsoleteN-CHANNEL ULTRAFET POWER MOSFET 55V, 2.6A, 90MΩ
Description
General part information
HUFA75307T3ST
This N-Channel power MOSFET is manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drives, low-voltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75307.
Technical Specifications
Parameters and characteristics for this part
| Specification | HUFA75307T3ST |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.6 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223-4 |
| Power Dissipation (Max) | 1.1 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 90 mOhm, 90 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources