Zenode.ai Logo

Description

General part information

NTE232

Bipolar (BJT) Transistor PNP - Darlington 30 V 300 mA 125MHz 625 mW Through Hole TO-92

Technical Specifications

Parameters and characteristics for this part

SpecificationNTE232
Current - Collector (Ic) (Max)0.3 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)50000
Frequency - Transition125 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92
Power - Max625 mW
Transistor TypePNP, Darlington
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

No documents available