AUIRFR8405

Obsolete

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 40V 100A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFR8405

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	5171 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	163 W
Rds On (Max) @ Id, Vgs	1.98 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Mounting Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Infineon Technologies AUIRFR8405	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.9 V	TO-252AA (DPAK)	40 V	10 V	5171 pF	155 nC	-55 °C	175 ░C	N-Channel	20 V	Surface Mount	MOSFET (Metal Oxide)	163 W	100 A	1.98 mOhm
Infineon Technologies AUIRFR8405	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.9 V	DPAK	40 V	10 V	5171 pF	155 nC	-55 °C	175 ░C	N-Channel	20 V	Surface Mount	MOSFET (Metal Oxide)	163 W	100 A	1.98 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 100A (Tc) 163W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources