IRFS7530TRLPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 2 MOHM;

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 2 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS7530TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	411 nC
Input Capacitance (Ciss) (Max) @ Vds	13703 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	PG-TO263-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFS7530TRL7PP	354 nC	MOSFET (Metal Oxide)	N-Channel	375 W	D2PAK TO-263-7	Surface Mount	20 V	-55 °C	175 ░C	3.7 V	12960 pF	6 V 10 V	60 V	PG-TO263-7	240 A	1.4 mOhm
Infineon Technologies IRFS7530TRLPBF	411 nC	MOSFET (Metal Oxide)	N-Channel	375 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V	-55 °C	175 ░C	3.7 V	13703 pF	6 V 10 V	60 V	PG-TO263-2	195 A	2 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 195A (Tc) 375W (Tc) Surface Mount PG-TO263-2

Technical documentation and resources