IRFR2307ZTRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 16 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 16 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR2307ZTRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IRFR2307ZTRLPBF	16 mOhm	20 V	Surface Mount	N-Channel	110 W	4 V	75 V	2190 pF	42 A	10 V	TO-252AA (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	175 ░C	MOSFET (Metal Oxide)	75 nC

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