DMC3060LVTQ-7
ActiveDiodes Inc
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC3060LVTQ-7
ActiveDiodes Inc
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMC3060LVTQ-7 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8 A, 3.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF, 395 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 830 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 95 mOhm, 60 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1 V, 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.14 | |
| 6000 | $ 0.13 | |||
| 9000 | $ 0.12 | |||
| 30000 | $ 0.12 | |||
Description
General part information
DMC3060LVTQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources