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IRFR3910TRLPBF - TO252-3

IRFR3910TRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 115 MOHM;

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IRFR3910TRLPBF - TO252-3

IRFR3910TRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 115 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFR3910TRLPBF
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)79 W
Rds On (Max) @ Id, Vgs115 mOhm
Supplier Device PackageTO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.73
10$ 1.10
100$ 0.74
500$ 0.58
1000$ 0.53
Digi-Reel® 1$ 1.73
10$ 1.10
100$ 0.74
500$ 0.58
1000$ 0.53
Tape & Reel (TR) 3000$ 0.47
6000$ 0.44

Description

General part information

IRFR3910 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources