CY15V116QN-40BKXI

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Infineon Technologies

FERROELECTRIC RAM (FRAM), 16 MBIT, 2M X 8BIT, SPI, 40 MHZ, 1.71 V TO 1.89 V SUPPLY, FBGA-24

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CY15V116QN-40BKXI

Active

Infineon Technologies

FERROELECTRIC RAM (FRAM), 16 MBIT, 2M X 8BIT, SPI, 40 MHZ, 1.71 V TO 1.89 V SUPPLY, FBGA-24

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DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY15V116QN-40BKXI

Access Time	9 ns
Clock Frequency	40 MHz
Memory Format	FRAM
Memory Interface	SPI
Memory Organization	2 M
Memory Size	16 Mb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	24-TBGA
Supplier Device Package	24-FBGA (6x8)
Technology	FRAM (Ferroelectric RAM)
Voltage - Supply [Max]	1.89 V
Voltage - Supply [Min]	1.71 V

CY15V116 Series

Part	Memory Format	Mounting Type	Clock Frequency	Access Time	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Supplier Device Package	Memory Organization	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Memory Type
Infineon Technologies CY15V116QI-20BKXC	FRAM	Surface Mount	20 MHz	20 ns	16 Mb	70 °C	0 °C	SPI	24-FBGA (6x8)	2 M	24-TBGA	1.89 V	1.71 V	FRAM (Ferroelectric RAM)	Non-Volatile
Infineon Technologies CY15V116QN-40BKXI	FRAM	Surface Mount	40 MHz	9 ns	16 Mb	85 °C	-40 °C	SPI	24-FBGA (6x8)	2 M	24-TBGA	1.89 V	1.71 V	FRAM (Ferroelectric RAM)	Non-Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 56.43
		10	$ 52.34
		25	$ 50.47
		40	$ 49.21
		80	$ 43.12
		230	$ 41.93
Newark	Each	1	$ 57.23
		5	$ 55.05
		10	$ 52.85
		25	$ 51.14
		50	$ 50.26
		100	$ 48.99

Description

General part information

CY15V116 Series

CY15V116QN-40BKXI is an EXCELON™ LP non-volatile ferroelectric RAM (F-RAM). This is a low-power, 16-Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. It is capable of supporting 10^15 read/write cycles or 1000 million times more write cycles than EEPROM.