ALD114804APCL

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Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16PDIP

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Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16PDIP

Technical Specifications

Parameters and characteristics for this part

Specification	ALD114804APCL

Current - Continuous Drain (Id) @ 25°C	12 mA, 3 mA
Drain to Source Voltage (Vdss)	10.6 V
FET Feature	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds	2.5 pF
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	0.3 in
Package / Case	16-DIP
Package / Case	7.62 mm
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	500 Ohm
Supplier Device Package	16-PDIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	380 mV

MOSFET 4N-CH 10.6V 16PDIP

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power - Max [Max]
Advanced Linear Devices Inc. ALD114804APCL	10.6 V	MOSFET (Metal Oxide)	0.3 in	16-DIP	7.62 mm	500 Ohm	Depletion Mode	2.5 pF	70 °C	0 °C	380 mV	Through Hole	3 mA, 12 mA	16-PDIP	500 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 6.67

General part information

Mosfet Array 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP

Technical documentation and resources