DGTD65T50S1PT

Obsolete

Diodes Inc

INSULATED GATE BIPOLAR TRANSISTOR,

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DGTD65T50S1PT

Obsolete

Diodes Inc

INSULATED GATE BIPOLAR TRANSISTOR,

Deep-Dive with AI

DocumentsPackage PDF Datasheet +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DGTD65T50S1PT

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	287 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	375 W
Reverse Recovery Time (trr)	80 ns
Supplier Device Package	TO-247
Switching Energy	550 µJ, 770 µJ
Td (on/off) @ 25°C	58 ns, 328 ns
Test Condition	7.9 Ohm, 15 V, 50 A, 400 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max)	650 V

DGTD65T15H2TF Series

650V FIELD STOP IGBT IN TO247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Switching Energy	Power - Max [Max]	Reverse Recovery Time (trr)	Gate Charge	Mounting Type	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)
Diodes Inc DGTD65T40S1PT	-40 C	175 °C	TO-247-3	80 A	7.9 Ohm 15 V 40 A 400 V	2.4 V	650 V	TO-247	1.15 mJ 350 µJ	341 W	145 ns	219 nC	Through Hole	Field Stop	58 ns	245 ns
Diodes Inc DGTD65T50S1PT	-40 C	175 °C	TO-247-3	100 A	7.9 Ohm 15 V 50 A 400 V	2.4 V	650 V	TO-247	550 µJ 770 µJ	375 W	80 ns	287 nC	Through Hole	Field Stop	58 ns 328 ns		200 A
Diodes Inc DGTD65T40S2PT	-40 C	175 °C	TO-247-3	80 A	10 Ohm 15 V 40 A 400 V	2.3 V	650 V	TO-247	400 µJ 500 µJ	230 W	60 ns	60 nC	Through Hole	Field Stop	6 ns 55 ns		120 A
Diodes Inc DGTD65T15H2TF	-40 C	175 °C	TO-220-3 Full Pack Isolated Tab	30 A	10 Ohm 15 A 15 V 400 V	2 V	650 V	ITO-220AB	86 µJ 270 µJ		150 ns	61 nC	Through Hole	Field Stop	19 ns 128 ns		60 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DGTD65T15H2TF Series

The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Documents

Technical documentation and resources

Package PDF

Package File

Datasheet

Recommended Soldering Techniques

Technical Document