DGD2118S8-13

Obsolete

Diodes Inc

IC GATE DRVR HIGH-SIDE 8SO

Search across all available documentation for this part.

Obsolete

Diodes Inc

IC GATE DRVR HIGH-SIDE 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	DGD2118S8-13

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	75 ns
Supplier Device Package	8-SO
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input Type	Number of Drivers	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type
Diodes Inc DGD2118S8-13	600 V	Surface Mount	20 V	10 VDC	High-Side	8-SOIC	3.9 mm	0.154 in	150 °C	-40 °C	8-SO	Non-Inverting	1	Single	35 ns	75 ns	9.5 V	6 V	290 mA	600 mA	IGBT N-Channel MOSFET

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side Gate Driver IC Non-Inverting 8-SO

Technical documentation and resources