FDMC7672
ActiveON Semiconductor
N-CHANNEL POWER TRENCH® MOSFET 30V, 16.9A, 5.7MΩ
FDMC7672
ActiveON Semiconductor
N-CHANNEL POWER TRENCH® MOSFET 30V, 16.9A, 5.7MΩ
Description
General part information
FDMC7672
This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC7672 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16.9 A |
| Current - Continuous Drain (Id) (Tc) | 20 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 57 nC, 57 nC |
| Input Capacitance (Ciss) (Max) | 3890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.3 mm |
| Package Name | 8-MLP |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 33 W, 2.3 W |
| Rds On (Max) | 5.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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Documents
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