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KSD1691GS

KSD1691GS

Obsolete
ON Semiconductor

TRANS GP BJT NPN 60V 5A 1300MW 3-PIN TO-126 BAG

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KSD1691GS

KSD1691GS

Obsolete
ON Semiconductor

TRANS GP BJT NPN 60V 5A 1300MW 3-PIN TO-126 BAG

Find alt

Description

General part information

KSD1691GS

Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3

Technical Specifications

Parameters and characteristics for this part

SpecificationKSD1691GS
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)200
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-225AA, TO-126-3
Package NameTO-126-3
Power - Max1.3 W
Transistor TypeNPN
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

3D models and CAD resources for this part