
IRFH9310TRPBF
ActiveInfineon Technologies
IR MOSFET™ P-CHANNEL ; SUPERSO8 5X6 PACKAGE; 4.6 MOHM;
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IRFH9310TRPBF
ActiveInfineon Technologies
IR MOSFET™ P-CHANNEL ; SUPERSO8 5X6 PACKAGE; 4.6 MOHM;
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFH9310TRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40 A, 21 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 58 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 3.1 W |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFH9310 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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Technical documentation and resources