RURU10060

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Harris Corporation

DIODE GEN PURP 600V 100A TO218

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Harris Corporation

DIODE GEN PURP 600V 100A TO218

Technical Specifications

Parameters and characteristics for this part

Specification	RURU10060

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-218-1
Speed	200 mA, 500 ns
Supplier Device Package	TO-218
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

DIODE GEN PURP 600V 100A TO218

Part	Package / Case	Mounting Type	Current - Average Rectified (Io)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology
Harris Corporation RURU10060	TO-218-1	Through Hole	100 A	200 mA, 500 ns	600 V	175 ░C	-65 C	TO-218	250 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	35	$ 8.68

General part information

Diode 600 V 100A Through Hole TO-218

Technical documentation and resources

No documents available