DMN2040UVT-7
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2040UVT-7
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2040UVT-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.7 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 7.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) | 1.2 W |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
DMN2040UVT Series
20V N-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Configuration | Package / Case | Package / Case [custom] | Package / Case [custom] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Grade | Package / Case [y] | Package / Case [x] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 5.2 nC | Surface Mount | 8-TSSOP | 1.2 V | 2 N-Channel (Dual) Common Drain | 8-TSSOP | 0.173 " | 4.4 mm | MOSFET (Metal Oxide) | -55 °C | 150 °C | AEC-Q101 | 6.7 A | 20 V | 890 mW | 26 mOhm | Automotive | ||||||||||
Diodes Inc | Surface Mount | 8-SOP | 1.2 V | 2 N-Channel (Dual) | 8-SOIC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 7 A | 20 V | 2 W | 26 mOhm | 3.9 mm | 0.154 in | Logic Level Gate | 562 pF | |||||||||||
Diodes Inc | Surface Mount | 1.5 V | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 6.7 A | 20 V | 24 mOhm | 1.2 W | 2.5 V 4.5 V | 7.5 nC | N-Channel | 8 V | 667 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.41 | |
| 10 | $ 0.29 | |||
| 100 | $ 0.15 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| Digi-Reel® | 1 | $ 0.41 | ||
| 10 | $ 0.29 | |||
| 100 | $ 0.15 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| Tape & Reel (TR) | 3000 | $ 0.09 | ||
| 6000 | $ 0.09 | |||
| 9000 | $ 0.08 | |||
| 30000 | $ 0.08 | |||
| 75000 | $ 0.07 | |||
| 150000 | $ 0.06 | |||
Description
General part information
DMN2040UVT Series
20V N-Channel Enhancement Mode MOSFET
Documents
Technical documentation and resources