IRFM120ATF
ObsoleteTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,2.3A I(D),SOT-223 ROHS COMPLIANT: YES
IRFM120ATF
ObsoleteTRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,2.3A I(D),SOT-223 ROHS COMPLIANT: YES
Description
General part information
IRFM120ATF
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFM120ATF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.3 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 22 nC |
| Input Capacitance (Ciss) (Max) | 480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223-4 |
| Power Dissipation (Max) | 2.4 W |
| Rds On (Max) | 200 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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