GP3D015A120A

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SemiQ

DIODE SIL CARB 1.2KV 15A TO220-2

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SemiQ

DIODE SIL CARB 1.2KV 15A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D015A120A

Capacitance @ Vr, F	962 pF
Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
SemiQ GP3D015A120A	SiC (Silicon Carbide) Schottky	15 A	30 µA	TO-220-2	No Recovery Time	1.2 kV	Through Hole	962 pF	0 ns	175 ░C	-55 C	1.6 V	TO-220-2

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General part information

Diode 1200 V 15A Through Hole TO-220-2

Technical documentation and resources