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FDB86563-F085

FDB86563-F085

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 60V, 110A, 1.8MΩ

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FDB86563-F085

FDB86563-F085

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 60V, 110A, 1.8MΩ

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Description

General part information

FDB86563-F085

N-Channel 60 V 110A (Tc) 333W (Tc) Surface Mount TO-263 (D2PAK)

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB86563-F085
Current - Continuous Drain (Id) (Tc)110 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)163 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)10100 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)333 W
QualificationAEC-Q101
Rds On (Max)1.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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