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ONSEMI MMBZ18VALT1G.

BC846ALT3G

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 65 V, 100 MA, 225 MW, SOT-23, SURFACE MOUNT

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ONSEMI MMBZ18VALT1G.

BC846ALT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 65 V, 100 MA, 225 MW, SOT-23, SURFACE MOUNT

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Description

General part information

BC846ALT3G

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationBC846ALT3G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)15 nA
DC Current Gain (hFE) (Min)110
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power - Max300 mW
Transistor TypeNPN
Vce Saturation (Max)600 mV
Voltage - Collector Emitter Breakdown (Max)65 V

Pricing

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CAD

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