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DMN60H4D5SK3-13

DMN60H4D5SK3-13

Obsolete
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN60H4D5SK3-13

DMN60H4D5SK3-13

Obsolete
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMN60H4D5SK3-13

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN60H4D5SK3-13
Current - Continuous Drain (Id) (Tc)2.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max)273.5 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)41 W
Rds On (Max)4.5 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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