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DMG1026UV-7 - SOT 563

DMG1026UV-7

Active
Diodes Inc

DUAL MOSFET, N CHANNEL, 60 V, 60 V, 410 MA, 410 MA, 1.2 OHM

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DMG1026UV-7 - SOT 563

DMG1026UV-7

Active
Diodes Inc

DUAL MOSFET, N CHANNEL, 60 V, 60 V, 410 MA, 410 MA, 1.2 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG1026UV-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C410 mA
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.45 nC
Input Capacitance (Ciss) (Max) @ Vds32 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]580 mW
Rds On (Max) @ Id, Vgs [Max]1.8 Ohm
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.30
100$ 0.18
500$ 0.17
1000$ 0.11
Digi-Reel® 1$ 0.39
10$ 0.30
100$ 0.18
500$ 0.17
1000$ 0.11
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.09
30000$ 0.09
75000$ 0.09

Description

General part information

DMG1026UVQ Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.