MUR360SB

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Taiwan Semiconductor Corporation

50NS, 3A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

50NS, 3A, 600V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	MUR360SB

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Reverse Recovery Time (trr)	Technology	Capacitance @ Vr, F	Qualification	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Supplier Device Package	Current - Reverse Leakage @ Vr	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation MUR360SBH	50 ns	Standard	40 pF	AEC-Q101	Surface Mount	200 mA 500 ns	600 V	DO-214AA SMB	1.25 V	SMB	DO-214AA	10 µA	Automotive	175 ░C	-55 C	3 A
Taiwan Semiconductor Corporation MUR360SB R5G	50 ns	Standard	40 pF		Surface Mount	200 mA 500 ns	600 V	DO-214AA SMB	1.25 V	SMB	DO-214AA	10 µA		175 ░C	-55 C	3 A
Taiwan Semiconductor Corporation MUR360SB	50 ns	Standard	40 pF		Surface Mount	200 mA 500 ns	600 V	DO-214AA SMB	1.25 V	SMB	DO-214AA	10 µA		175 ░C	-55 C	3 A
Taiwan Semiconductor Corporation MUR360S R7G	50 ns	Standard			Surface Mount	200 mA 500 ns	600 V	DO-214AB SMC	1.25 V		DO-214AB (SMC)	10 µA		175 ░C	-55 C	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources