IRFR024NTRPBF

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Infineon Technologies

MOSFET, N-CHANNEL, 55V, 17A, TO-252AA ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CHANNEL, 55V, 17A, TO-252AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR024NTRPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Infineon Technologies IRFR024NTRPBF	75 mOhm	TO-252AA (DPAK)	Surface Mount	N-Channel	10 V	17 A	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	45 W	20 V	55 V	20 nC	370 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3
Infineon Technologies IRFR024NTRLPBF	75 mOhm	PG-TO252-3	Surface Mount	N-Channel	10 V	17 A	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	45 W	20 V	55 V	20 nC	370 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly