DMG4800LSDQ-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 6.4A I(D), 30V, 0.016OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 6.4A I(D), 30V, 0.016OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	DMG4800LSDQ-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	8.56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	798 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.17 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.6 V

Dual N-Channel Enhancement Mode MOSFET

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Power Dissipation (Max)	Package / Case [y]	Package / Case [x]	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Grade	Configuration
Diodes Inc DMG4800LK3-13	N-Channel	10 A	798 pF	30 V	-55 °C	150 °C	4.5 V 10 V	Surface Mount	17 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.6 V	TO-252-3	8.7 nC	25 V	MOSFET (Metal Oxide)	1.71 W
Diodes Inc DMG4800LSDQ-13		7.5 A	798 pF	30 V	-55 °C	150 °C		Surface Mount	16 mOhm	8-SOIC	1.6 V	8-SOP			MOSFET (Metal Oxide)		3.9 mm	0.154 in	AEC-Q101	8.56 nC	1.17 W	Automotive	2 N-Channel (Dual)

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General part information

Dual N-Channel Enhancement Mode MOSFET

Technical documentation and resources