BS107P

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Diodes Inc

200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

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Diodes Inc

200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	BS107P

Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
Drive Voltage (Max Rds On, Min Rds On)	2.6 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	30 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

200V N-Channel Enhancement Mode Vertical DMOSFET

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Qualification	Power Dissipation (Max) [Max]	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Diodes Inc BS107PSTZ	Automotive	5 V	2.6 V	Through Hole	30 Ohm	E-Line-3	20 V	200 V	AEC-Q101	500 mW	N-Channel	E-Line (TO-92 compatible)	-55 °C	150 °C	MOSFET (Metal Oxide)
Diodes Inc BS107P		5 V	2.6 V	Through Hole	30 Ohm	TO-226-3 TO-92-3	20 V	200 V		500 mW	N-Channel	TO-92	-55 °C	150 °C	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly