IRFS3006TRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 195 A, 0.002 OHM, TO-263AB, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 195 A, 0.002 OHM, TO-263AB, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3006TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	8970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFS3006TRL7PP	375 W	20 V	2.1 mOhm	8850 pF	D2PAK TO-263-7 TO-263CB	4 V	N-Channel	-55 °C	175 ░C	240 A	300 nC	D2PAK (7-Lead)	10 V	MOSFET (Metal Oxide)	60 V	Surface Mount
Infineon Technologies IRFS3006TRLPBF	375 W	20 V		8970 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	N-Channel	-55 °C	175 ░C	195 A	300 nC	D2PAK	10 V	MOSFET (Metal Oxide)	60 V	Surface Mount	2.5 mOhm

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