
2N6667G
ObsoleteON Semiconductor
10 A, 60 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

2N6667G
ObsoleteON Semiconductor
10 A, 60 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
Description
General part information
2N6667G
The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6667G |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 1 mA |
| DC Current Gain (hFE) (Min) | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power - Max | 2 VA |
| Transistor Type | PNP, Darlington |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
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Documents
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