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2N6667G

2N6667G

Obsolete
ON Semiconductor

10 A, 60 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

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2N6667G

2N6667G

Obsolete
ON Semiconductor

10 A, 60 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

Find alt

Description

General part information

2N6667G

The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.

Technical Specifications

Parameters and characteristics for this part

Specification2N6667G
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)1 mA
DC Current Gain (hFE) (Min)1000
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-220-3
Package NameTO-220
Power - Max2 VA
Transistor TypePNP, Darlington
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

3D models and CAD resources for this part