FDMC035N10X1
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100 V, 5.5 A, 37 MΩ
FDMC035N10X1
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100 V, 5.5 A, 37 MΩ
Description
General part information
FDMC035N10X1
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench®technology. This very high density process is especially tailored to minimize on state resistance and optimized for hot swap applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC035N10X1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5.5 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 58 nC, 58 nC |
| Input Capacitance (Ciss) (Max) | 2675 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.3 mm |
| Package Name | Power33, 8-PQFN |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 50 W, 2.3 W |
| Rds On (Max) | 0.037 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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