DMG3418L-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMG3418L-7

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds	464.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel Enhancement Mode MOSFET

Part	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Diodes Inc DMG3418L-7	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	-55 °C	150 °C	4 A	30 V	10 V	2.5 V	464.3 pF	12 V	Surface Mount	1.5 V	N-Channel	5.5 nC	SOT-23-3	60 mOhm	1.4 W

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General part information

N-Channel Enhancement Mode MOSFET

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