ISC009N06LM5ATMA1
ActiveTHE ISC009N06LM5, INFINEON'S OPTIMOS™ MOSFET IN THE SUPERSO8 PACKAGE ENABLES HIGHER POWER DENSITY IN ADDITION TO IMPROVED ROBUSTNESS.
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ISC009N06LM5ATMA1
ActiveTHE ISC009N06LM5, INFINEON'S OPTIMOS™ MOSFET IN THE SUPERSO8 PACKAGE ENABLES HIGHER POWER DENSITY IN ADDITION TO IMPROVED ROBUSTNESS.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC009N06LM5ATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 209 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W, 214 W |
| Rds On (Max) @ Id, Vgs | 0.9 mOhm |
| Supplier Device Package | PG-TSON-8-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
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Description
General part information
ISC009N Series
The ISC009N06LM5, Infineon'sOptiMOS™ MOSFETin the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Documents
Technical documentation and resources