DMC3020UDVW-7
ActiveDiodes Inc
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMC3020UDVW-7
ActiveDiodes Inc
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMC3020UDVW-7 |
|---|---|
| Configuration | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC, 13.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 383 pF, 782 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 1.18 W |
| Rds On (Max) @ Id, Vgs | 31 mOhm, 42 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.85 V, 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 0.20 | |
| 4000 | $ 0.18 | |||
| 6000 | $ 0.17 | |||
| 10000 | $ 0.16 | |||
| 14000 | $ 0.16 | |||
| 20000 | $ 0.15 | |||
| 50000 | $ 0.14 | |||
Description
General part information
DMC3020UDVW Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources