IRFH4210DTRPBF
ActiveInfineon Technologies
IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 5 X 6 B PACKAGE; 1.1 MOHM; SCHOTTKY
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IRFH4210DTRPBF
ActiveInfineon Technologies
IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 5 X 6 B PACKAGE; 1.1 MOHM; SCHOTTKY
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFH4210DTRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 44 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 77 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4812 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 125 W, 3.5 W |
| Rds On (Max) @ Id, Vgs | 1.1 mOhm |
| Supplier Device Package | PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFH4210 Series
N-Channel 25 V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)