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DMN2053UFDBQ-13 - U-DFN2020-6

DMN2053UFDBQ-13

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Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2053UFDBQ-13 - U-DFN2020-6

DMN2053UFDBQ-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2053UFDBQ-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C4.6 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs7.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds369 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power - Max [Max]820 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackageU-DFN2020-6 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.13
20000$ 0.12
30000$ 0.11
50000$ 0.11

Description

General part information

DMN2053UFDBQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: general-purpose interfacing switches, power-management functions, DC-DC converters, and analog switches.