2SJ652-1E
ObsoleteON Semiconductor
MOSFET P-CH 60V 28A TO220F-3SG
2SJ652-1E
ObsoleteON Semiconductor
MOSFET P-CH 60V 28A TO220F-3SG
Description
General part information
2SJ652-1E
P-Channel 60 V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220F-3SG
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SJ652-1E |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 28 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 80 nC, 80 nC |
| Input Capacitance (Ciss) (Max) | 4360 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220F-3SG |
| Power Dissipation (Max) | 2 W, 30 W |
| Rds On (Max) | 38 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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