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N01S818HAT22I

N01S818HAT22I

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ON Semiconductor

SERIAL SRAM MEMORY, ULTRA-LOW-POWER, 1 MB, 1.7 - 2.2 V

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N01S818HAT22I

N01S818HAT22I

Active
ON Semiconductor

SERIAL SRAM MEMORY, ULTRA-LOW-POWER, 1 MB, 1.7 - 2.2 V

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Description

General part information

N01S818HAT22I

The ON Semiconductor serial SRAM family includes severalintegrated memory devices including this 1Mb serially accessed StaticRandom Access Memory, internally organized as 128 K words by8 bi t s . The devices are designed and fabricated usingON Semiconductor’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory.The devices can operate over a wide temperature range of −40°C to+85°C and are available in a 8-lead TSSOP package.

Technical Specifications

Parameters and characteristics for this part

SpecificationN01S818HAT22I
Clock Frequency20 MHz
Memory Depth128 K
Memory FormatSRAM
Memory Interface (Type)SPI
Memory Size1 Mbit
Memory TypeVolatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length0.173 in
Package Name8-TSSOP
Package Width4.4 mm
TechnologySRAM
Voltage - Supply (Maximum)2.2 V
Voltage - Supply (Minimum)1.7 V

Pricing

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CAD

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