DMN52D0UW-13
ActiveDiodes Inc
50V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN52D0UW-13
ActiveDiodes Inc
50V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN52D0UW-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN52D0UW-13 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 380 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.4 nC |
| Input Capacitance (Ciss) (Max) | 39 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | SOT-323 |
| Power Dissipation (Max) | 400 µW |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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Documents
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