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71V3559 Block Diagram - 256K x 18

71V3559S80BQI

Obsolete
Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O

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71V3559 Block Diagram - 256K x 18

71V3559S80BQI

Obsolete
Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O

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Description

General part information

71V3559 Series

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Technical Specifications

Parameters and characteristics for this part

Specification71V3559S80BQI
Access Time8 ns
Memory Depth256 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size4.5 Mbit
Memory TypeVolatile
Memory Width18 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case165-TBGA
Package Length13 mm
Package Name165-CABGA
Package Width15 mm
TechnologySDR (ZBT), SRAM - Synchronous
Voltage - Supply (Maximum)3.465 V
Voltage - Supply (Minimum)3.135 V

Pricing

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CAD

3D models and CAD resources for this part