VN2450N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 OHM
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VN2450N3-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN2450N3-G | VN2450 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 200 mA | 200 - 250 mA |
| Drain to Source Voltage (Vdss) | 500 V | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF | 150 pF |
| Mounting Type | Through Hole | Surface Mount, Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-243AA, TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs [Max] | 13 Ohm | 13 Ohm |
| Supplier Device Package | TO-92-3 | TO-243AA (SOT-89), TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 1.45 | |
| 25 | $ 1.22 | |||
| 100 | $ 1.11 | |||
| Microchip Direct | BAG | 1 | $ 1.45 | |
| 25 | $ 1.22 | |||
| 100 | $ 1.11 | |||
| 1000 | $ 0.91 | |||
| 5000 | $ 0.86 | |||
| 10000 | $ 0.79 | |||
VN2450 Series
MOSFET, N-Channel Enhancement-Mode, 500V, 13 Ohm
| Part | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN2450N8-G | ||||||||||||||
Microchip Technology VN2450N8-G | 13 Ohm | 4.5 V, 10 V | TO-243AA (SOT-89) | -55 °C | 150 °C | MOSFET (Metal Oxide) | 20 V | Surface Mount | 500 V | N-Channel | 150 pF | TO-243AA | 250 mA | |
Microchip Technology VN2450N3-G | 13 Ohm | 4.5 V, 10 V | TO-92-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 20 V | Through Hole | 500 V | N-Channel | 150 pF | TO-226-3, TO-92-3 | 200 mA | 1 W |
Description
General part information
VN2450 Series
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.