IRFS3207TRLPBF

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Infineon Technologies

MOSFET N-CH 75V 170A D2PAK

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Infineon Technologies

MOSFET N-CH 75V 170A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3207TRLPBF

Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	7600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRFS3207ZTRRPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4.1 mOhm	300 W	75 V	170 nC	TO-263 (D2PAK)	20 V	N-Channel	120 A	4 V	6920 pF	-55 °C	175 ░C	Surface Mount	10 V
Infineon Technologies IRFS3207TRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4.5 mOhm	300 W	75 V	260 nC	D2PAK	20 V	N-Channel		4 V		-55 °C	175 ░C	Surface Mount	10 V	7600 pF

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