ISC0802NLSATMA1
ActiveOPTIMOS™ PD POWER MOSFET ISC0802NLS IN THE SUPERSO8 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.
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ISC0802NLSATMA1
ActiveOPTIMOS™ PD POWER MOSFET ISC0802NLS IN THE SUPERSO8 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC0802NLSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A, 150 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [x] | 73 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5190 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 125 W |
| Rds On (Max) @ Id, Vgs | 3.6 mOhm |
| Supplier Device Package | PG-TDSON-8-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ISC0802N Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISC0802NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction.OptiMOS™ PDfeatures quality products in compact, lightweight packages.
Documents
Technical documentation and resources