NSS40300DDR2G
ActiveLOW V<SUB>CE(SAT)</SUB> TRANSISTOR, DUAL PNP, 40 V, 6.0 A/ REEL ROHS COMPLIANT: YES
NSS40300DDR2G
ActiveLOW V<SUB>CE(SAT)</SUB> TRANSISTOR, DUAL PNP, 40 V, 6.0 A/ REEL ROHS COMPLIANT: YES
Description
General part information
NSS40300DD Series
ON Semiconductor's e2PowerEdge family of Low VCE(sat)Bipolar Transistors are surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSS40300DDR2G |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 180 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| PNP Count | 2 |
| Power - Max | 653 mW |
| Transistor Configuration | Dual |
| Transistor Type | PNP |
| Vce Saturation (Max) | 170 mV |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
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